@misc{Tymicki_Emil_15R-SiC_2012,
 author={Tymicki Emil},
 volume={40},
 editor={Raczkiewicz Marcin},
 editor={Racka Katarzyna},
 editor={Grasza Krzysztof},
 editor={Kościewicz Kinga},
 editor={Diduszko Ryszard},
 editor={Mazur Krystyna},
 editor={Łukasiewicz Tadeusz},
 number={3},
 copyright={Rights Reserved - Free Access},
 address={Warszawa},
 journal={Electronic Materials},
 howpublished={online},
 year={2012},
 publisher={ITME},
 language={pol},
 type={Text},
 title={15R-SiC w kryształach 4H- i 6H-SiC otrzymywanych metodą transportu fizycznego z fazy gazowej = 15R-SiC inclusions in 4H-and 6H-SiC crystals grown by the physical vapour transport method},
 URL={http://www.rcin.org.pl/Content/27945/PDF/WA901_46214_M1_r2012-t40-z3_Mater-Elektron-Tymi_i.pdf},
 keywords={Electronic - journal - materials, Electronic - materials, SiC, 15R-SiC, polytype inclusion, Method PVT},
}