@misc{Kamiński_Paweł_Deep-level_2010,
 author={Kamiński Paweł},
 volume={38},
 number={3/4},
 copyright={Rights Reserved - Free Access},
 address={Warszawa},
 journal={Electronic Materials},
 howpublished={online},
 year={2010},
 publisher={ITME},
 language={eng},
 type={Text},
 title={Deep-level deffects in epitaxial 4H-SiC irradiated with low-energy electrons = Głębokie centra defektowe w warstwach epitaksjalnych 4H-SiC napromieniowanych elektronami o niskiej energii},
 URL={http://www.rcin.org.pl/Content/27737/PDF/WA901_16632_M1_r2010-t38-z3-4_Mater-Elektron-Kam_i.pdf},
 keywords={Electronic - journal - materials, Electronic - materials, DLTS, 4H-SiC, electron traps, points defects},
}